Apart from crystal quality, problems with the interface of SiC with silicon dioxide have hampered the development of SiC-based power MOSFETs and insulated-gate bipolar transistors. One of the most revolutionary developments was the usage of SiC as a key compound in a few of its devices. How these devices are https://www.facebook.com/permalink.php?story_fbid=pfbid02qthudRtZbHesNN5ubc2ZvveB5AS9uQQyNHtgMwBU4hyNSi6jnKY3eV3o9ZT7JDQfl&id=61562415773754&__cft__[0]=AZWX_y3NrRP_jj78VzUBAV51pRwlJRQnJK3erzKMx0CLRNzLRDJlMCul2hrlBOXx7sl0vHum3DLOaOb9qMr6dxaDCIdWeCf9zol2iCs_C7tdO_eOZAiXvR5i3_kQlUCyxso0_T4jt4AmyxBMYzSAtSm-arkTy_Ph5urn_ChJ8kdA1gTXAYN8-BSLMSB1L-aacihdE4SxPPiNWg0tXt0G6l7p&__tn__=%2CO%2CP-R